Samsung has just announced a 2GB GDDR6 chip that is capable of matching SK Hynix’s 16Gbps silicon. The chip offers double memory density of their Korean GDDR6 rivals and they are already winning awards.

CES is still months away and yet Samsung is already celebrating winning CES 2018 Innovation Award for their GDDR6.

The memory die is capable of hitting 16Gbps speed ram as the 8Gbps chips that SK Hynix announced in April,
which means memory bandwidth will level up to 768GB/s on the same sort of 384-bit aggregated memory bus used in the Nvidia Titan X and Titan Xp.

The current GDDR5X VRAM used in those cards at the moment is only capable of producing 480GB/s and 548GB/s respectively.

The 2,048-bit bus used in conjunction with the AMD RX Vega’s HBM2 memory is able to provide just under 484GB/s of memory bandwidth, so future implementations of the HBM2 with GPUs are going to have to get a bit of a boost to match the upcoming GDDR6 performance.

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